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We demonstrate the epitaxial growth of tetragonal platinum monoxide (PtO) on MgO, TiO2, and β-Ga2O3 single-crystalline substrates by ozone molecular-beam epitaxy. We provide synthesis routes and derive a growth diagram under which PtO films can be synthesized by physical vapor deposition. A combination of electrical transport and photoemission spectroscopy measurements, in conjunction with density functional theory calculations, reveal PtO to be a degenerately doped p-type semiconductor with a bandgap of Eg ≈ 1.6 eV. Spectroscopic ellipsometry measurements are used to extract the complex dielectric function spectra, indicating a transition from free-carrier absorption to higher photon energy transitions at E ≈ 1.6 eV. Using tetragonal PtO as an anode contact, we fabricate prototype Schottky diodes on n-type Sn-doped β-Ga2O3 substrates and extract Schottky barrier heights of ϕB > 2.2 eV. 

Low resistance non-alloyed ohmic contacts are realized by a metal-first process on homoepitaxial, heavily n+ doped (010) β-Ga2O3. The resulting contacts have a contact resistance (Rc) as low as 0.23 Ω-mm on an as-grown sample and exhibit nearly linear ohmic behavior even without a post-metallization anneal. The metal-first process was applied to form non-alloyed contacts on n+ (010) β-Ga2O3 grown by metal-organic chemical vapor deposition (MOCVD) as well as suboxide molecular beam epitaxy. Identical contacts fabricated on similar MOCVD samples by conventional liftoff processing exhibit highly rectifying Schottky behavior. Re-processing using the metal-first process after removal of the poor contacts by conventional methods does not improve the contacts; however, addition of a Ga-flux polishing step followed by re-processing using a metal-first process again results in low resistance, nearly linear ohmic contacts. The liftoff process, therefore, does not reliably render nearly linear ohmic behavior in non-alloyed contacts. Furthermore, no interface contamination was detected by x-ray photoelectron spectroscopy. This suggests that during the initial liftoff processing, a detrimental layer may form at the interface, likely modification of the Ga2O3 surface, that is not removable during the contact removal process but that can be removed by Ga-flux polishing.